DESCRIPTION
The WCT-120 is a tabletop silicon lifetime and wafer metrology system, suitable for both device research and industrial process control. It can be used for monitoring multicrystalline wafers, dopant diffusions, and low-lifetime samples. This method complements the use of the transient photoconductance technique that is also standard on this instrument. It also yields the implied open-circuit voltage (versus illumination) curve, which is comparable to an I-V curve at each stage of a solar cell process.
The Suns-Voc stage is used for measuring wafers after Al firing, and then again after front-grid firing. This allows the optimization and monitoring of these steps to maintain voltage, obtain good ohmic contacts, and avoid shunting. By either probing the p+ and n+ regions directly or probing the metallization layer (if present), the Illumination-Voc curve can be measured. This curve can be displayed as a Suns-Voc plot or in the form of a standard photovoltaic curve which can be used to characterize shunting. The entire curve is measured at open circuit, so it is free from the effects of series resistance.
LOCATION
Optoelectronics Characterization Lab-SAN- Arzanah-8-020
CONTACT INFO
Teenu Thomas (